Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R trade-off, delivering high reliability protection for a wide range ...

Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...